发明名称 |
Method for fabricating thin film transistor including crystalline silicon active layer |
摘要 |
The invention provides a method for fabricating a TFT including a crystalline silicon active layer. The inventive method forms a metal offset region between the metal layer used to induce the cystallization of the active layer and the channel region of the TFT without introducing an additional process such as photoresist processing. Therefore, the inventive method improves the performance and manufacturing productivity of TFT and lower its production cost as well.
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申请公布号 |
US2002142528(A1) |
申请公布日期 |
2002.10.03 |
申请号 |
US20020113351 |
申请日期 |
2002.04.01 |
申请人 |
JOO SEUNG KI;LEE SEOK-WOON |
发明人 |
JOO SEUNG KI;LEE SEOK-WOON |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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