A DEVICE FOR EPITAXIALLY GROWING OBJECTS BY CVD

摘要

A device for epitaxially growing objects by Chemical Vapour Deposition on substrates (13) comprises a casing (2) defining a room (5) for receiving a holder (11) carrying a plurality of substrates and adapted to be rotated abo ut a substantially vertical axis as well as means for rotating said holder duri ng the growth. The device has also means (10) for feeding a gas mixture for the growth into said room through an inlet (9) being directed substantially alon g said vertical axis and means (15) for heating said gas mixture inside said room for decomposition thereof and depositing of articles so formed on the substrate for growing layers thereon in a substantially vertical direction f or said growth. The room (5) is delimited by a susceptor having fixed walls (7, 8) of a substantial thickness. The heating means (15) is adapted to heat the susceptor walls for heating said gas mixture substantially through radiation from the hot susceptor walls.