FABRICATION METHOD OF SO1 SEMICONDUCTOR DEVICES

摘要

The present invention relates to a method for fabrication of semiconductor devices, in particular but not limited to the fabrication of double gate transistors of the type Gate-All-Around or "semiconductor-on-nothing" transistors and devices. A method according to the present invention comprises the steps of: (a) forming a trench in a least a first substrate, (b) transferring semiconductor material over the trench to form a semiconductor bridge across the trench, the semiconductor bridge defining an active area. The bridge may be free to oscillate above the trench without using removing a sacrificial layer. The method may also include the steps of: (c) forming a gate insulator on the semiconductor bridge, and (d) applying gate material on the gate insulator, thus forming a gate.