| 摘要 |
High quality ionicly-bonded semiconductor materials can be grown overlying covalently-bonded substrates (22), such as large silicon wafers, by utilizing a stable template layer (24). The template layer is formed of material consisting of alkaline earth metal, alkaline earth metal silicide, alkaline earth metal silicate and/or Zintl-type phase material. A high-quality ionicly-bonded semiconductor material (26) may then be grown over the template layer.
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