Manufacturing method of semiconductor device, exposure data preparing method, preparing method of aperture mask data, and charge beam exposure apparatus

摘要

There is disclosed a manufacturing method of a semiconductor device comprising extracting characters from each layer defined in a standard cell for use in a circuit pattern of the semiconductor device designed by using standard cells, designing a pattern layout of an aperture mask in which character apertures having an aperture shape corresponding to an extracted character shape are arranged in a plurality of aperture blocks able to be irradiated with charged particle beam by deflection, and generating one piece of exposure data in which position information of the character apertures in the aperture blocks, and an irradiation position of a sample with the charged particle beam shaped by the character apertures are recorded and which is common to a plurality of layers defined in the standard cell based on the designed pattern layout.