Thin-film deposition of low conductivity targets using cathodic ARC plasma process

摘要

This invention discloses a cathodic arc deposition apparatus for depositing a layer of low-conductivity material on a surface of a substrate. The cathodic arc deposition apparatus includes a source contained in a vacuum chamber. The source further includes a target mount for mounting a target thereon wherein the target comprising fused mixture of powders of the low-conductivity material hot-pressed with powders of a high conductivity material functioning as conductivity-enhancement matrix. The cathodic arc deposition apparatus further includes an electric arc for striking the target to evaporate a plurality of ions of the low conductivity material and the high conductivity material. The cathodic arc deposition apparatus further includes an ion trajectory guiding means for guiding the ions for projecting to the substrate contained in the vacuum chamber. The cathodic arc deposition apparatus further includes an ion shielding means for selective shielding ions of the conductive material for depositing only the ions of the low-conductivity material on the substrate.