发明名称 |
Method for controlling etching depth |
摘要 |
A method for controlling an etching depth in a semiconductor fabricating process is provided. The method includes steps of providing a substrate having a first reflecting region and a second reflecting region, illuminating the first reflecting region and the second reflecting region with a coherence light having a wavelength lambd to generate an interference, performing a first etching on the second reflecting region to generate a height difference between the first reflecting region and the second reflecting region, wherein the interference intensity is changed with the first etching, and performing a second etching on the second reflecting region for a specific period of time to make the etching depth as the height difference when the interference intensity is changed to a relative extreme value.
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申请公布号 |
US2002142613(A1) |
申请公布日期 |
2002.10.03 |
申请号 |
US20010824476 |
申请日期 |
2001.04.02 |
申请人 |
FU CHING-HUNG;TSAI NIEN-YU |
发明人 |
FU CHING-HUNG;TSAI NIEN-YU |
分类号 |
G01B11/22;H01L21/302;H01L21/308;H01L21/3213;H01L21/461;H01L21/66;(IPC1-7):H01L21/302 |
主分类号 |
G01B11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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