发明名称 METHOD FOR PRODUCING OXIDE FILM FOR BOLOMETER
摘要 PROBLEM TO BE SOLVED: To provide a non-cooling type infrared sensor by bolometer-system having a supersensitivity, and provide a method for producing an oxide film for a bolometer having a large temperature coefficient of electric resistance (TCR) and a method for producing an infrared sensor using the film. SOLUTION: An oxide film for a bolometer having a big temperature coefficient of electric resistance is produced by crystallizing a perovskite-type Mn oxide film at a low temperature of 500 deg.C or less through irradiating a laser rays of 400 nm or less of wavelength after application of an organometallic compound onto an insulating substrate and drying. And an infrared sensor is produced by directly forming a resistance for bolometer onto an insulating substrate using a masking pattern when forming the perovskite-type Mn oxide film.
申请公布号 JP2002284529(A) 申请公布日期 2002.10.03
申请号 JP20010089149 申请日期 2001.03.27
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY;MIZUTA SUSUMU;NEC CORP 发明人 TSUCHIYA TETSUO;MIZUTA SUSUMU;KUMAGAI TOSHIYA;YOSHITAKE TSUTOMU;SHIMAKAWA YUICHI;KUBO YOSHIMI
分类号 C01G45/00;C23C8/10;C23C26/00;G01K17/00;H01L31/0264;H01L37/00;(IPC1-7):C01G45/00;H01L31/026 主分类号 C01G45/00
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