发明名称 |
METHOD FOR PRODUCING OXIDE FILM FOR BOLOMETER |
摘要 |
PROBLEM TO BE SOLVED: To provide a non-cooling type infrared sensor by bolometer-system having a supersensitivity, and provide a method for producing an oxide film for a bolometer having a large temperature coefficient of electric resistance (TCR) and a method for producing an infrared sensor using the film. SOLUTION: An oxide film for a bolometer having a big temperature coefficient of electric resistance is produced by crystallizing a perovskite-type Mn oxide film at a low temperature of 500 deg.C or less through irradiating a laser rays of 400 nm or less of wavelength after application of an organometallic compound onto an insulating substrate and drying. And an infrared sensor is produced by directly forming a resistance for bolometer onto an insulating substrate using a masking pattern when forming the perovskite-type Mn oxide film.
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申请公布号 |
JP2002284529(A) |
申请公布日期 |
2002.10.03 |
申请号 |
JP20010089149 |
申请日期 |
2001.03.27 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY;MIZUTA SUSUMU;NEC CORP |
发明人 |
TSUCHIYA TETSUO;MIZUTA SUSUMU;KUMAGAI TOSHIYA;YOSHITAKE TSUTOMU;SHIMAKAWA YUICHI;KUBO YOSHIMI |
分类号 |
C01G45/00;C23C8/10;C23C26/00;G01K17/00;H01L31/0264;H01L37/00;(IPC1-7):C01G45/00;H01L31/026 |
主分类号 |
C01G45/00 |
代理机构 |
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