| 摘要 |
A channel diffusion area (2) for forming a channel region (2a) is placed on a semiconductor layer (1), a source area (3) is formed on this area and a source electrode (7) is formed on the surface of this source area by a metal film. Then, the metal of the source electrode is allowed to spike into the source area and the channel diffusion area to form an alloy layer (7a) with the semiconductor layer, and through this alloy layer, the source electrode is made in ohmic contact with both of the source area and the channel diffusion area. As a result, it is possible to obtain a semiconductor device with an insulated gate-driving element having a construction which makes it possible to minimize the on-resistance by increasing the gate width, using the chip area of the same size, and consequently to provide a greater current.
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