| 摘要 |
An etching apparatus has (a) a processing unit to ionize a reactive gas and generate plasma to process a semiconductor wafer, (b) a bed on which the semiconductor wafer is set, (c) a first magnet arranged below the semiconductor wafer in the vicinity of the periphery of a semiconductor chip forming area defined on the semiconductor wafer, and (d) a second magnet arranged above the semiconductor wafer in the vicinity of the periphery of the semiconductor chip forming area.
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