| 摘要 |
<p>An exemplary method of fabricating an integrated circuit includes patterning a first layer (28) having a first dimension where the first layer (28) is disposed over an etch stop layer (26) and a second layer (24); oxidizing the surface (30) of the patterned first layer (28); removing the oxidized surface (30) of the patterned first layer (28) resulting in a second dimension for the patterned first layer (28); and etching the etch stop layer (26) and the second layer (24) using the patterned first layer (28) having the second dimension as a hard mask.</p> |
