发明名称 |
Vorrichtung zur Wärmebehandlung von einzelnen Wafern und Verfahren zur Herstellung eines Reaktorgefässes dafür |
摘要 |
<p>A wafer heat-treatment apparatus is known, comprising a reactor vessel having a ceiling portion and a side portion, and heater or heaters installed outside or inside the reactor vessel, whereby a single wafer is disposed at a predetermined position in the vessel for heat-treatment by means of heat from the heater or heaters. To provide a single-wafer heat-treatment apparatus with securement of enough strength in heat-treatment of a semiconductor wafer of an enlarged diameter of as large as 8 inches to 12 inches and improved working efficiency in exchange of wafers and facilitation of operation in a single-wafer heat-treatment, it is suggested that at least a heated region of the reactor vessel is manufactured as substantially a single quartz glass body with no welded portion, and at least a part of the heated region is translucent or opaque by bubbles distributed almost throughout the bulk of the region. <IMAGE></p> |
申请公布号 |
DE69527918(D1) |
申请公布日期 |
2002.10.02 |
申请号 |
DE1995627918 |
申请日期 |
1995.11.30 |
申请人 |
HERAEUS QUARZGLAS GMBH & CO. KG;SHIN-ETSU QUARTZ PRODUCTS CO., LTD. |
发明人 |
AOYAMA, MASAAKI;MIYAZAWA, HIROYUKI |
分类号 |
C03B19/09;C03C3/06;C03C11/00;C23C16/46;C23C16/54;C30B25/08;H01L21/00;H01L21/22;H01L21/31;(IPC1-7):H01L21/00;C03B19/06;F27B17/00;C03B19/04 |
主分类号 |
C03B19/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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