发明名称
摘要 The invention provides a system and method for vaporizing a target structure on a substrate. According to the invention, a calculation is performed, as a function of wavelength, of an incident beam energy necessary to deposit unit energy in the target structure. Then, for the incident beam energy, the energy expected to be deposited in the substrate as a function of wavelength is calculated. A wavelength is identified that corresponds to a relatively low value of the energy expected to be deposited in the substrate, the low value being substantially less than a value of the energy expected to be deposited in the substrate at a higher wavelength. A laser system is provided configured to produce a laser output at the wavelength corresponding to the relatively low value of the energy expected to be deposited in the substrate. The laser output is directed at the target structure on the substrate at the wavelength corresponding to the relatively low value of the energy expected to be deposited in the substrate, in order to vaporize the target structure.
申请公布号 JP2002532891(A) 申请公布日期 2002.10.02
申请号 JP20000587922 申请日期 1999.12.16
申请人 发明人
分类号 H01L21/3205;B23K26/02;B23K26/06;B23K26/08;B23K26/10;B23K26/36;B23K26/40;H01L21/304;H01L21/768;H01L23/52;H01L23/525;H01L27/10;H01S3/00 主分类号 H01L21/3205
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