Nitride semiconductor device

摘要

A nitride semiconductor device having high electrode contact properties is disclosed. The nitride semiconductor device includes a semiconductor layer made of a group III nitride semiconductor, and a metal electrode (9) for supplying the semiconductor layer with a carrier. The device has a first contact layer (6) made of a group III nitride semiconductor (Al x Ga 1-x ) 1-y In y N (0‰¤x‰¤1, 0<y‰¤1), laminated between the semiconductor layer and the metal electrode, and a group II element added thereto, and a second contact layer made of a group III nitride semiconductor Al x' Ga 1-x' N (0‰¤x'‰¤1) and laminated between the first contact (6) and the metal electrode (9).