| 摘要 |
<p>A selenidation reaction for bonding one or more active substrates to a base substrate is disclosed. A bonded-substrate is fabricated by forming a first multi-stacked layer 15 of selenium and indium on a bonding surface 12 of an active substrate A and forming a second multi-stacked layer 17 of selenium and indium on a mounting surface 14 of a base substrate B. The first and second multi-stacked layers (15, 17) are placed into contact with each other with substantially no pressure. Then the active substrate A and the base substrate B are bonded to each other by annealing them in an inert ambient to form an indium-selenium compound bond layer 19 that adhesively bonds the substrates (A, B) to each other. The annealing can occur at a lower temperature than prior wafer-bonding processes and the first and second multi-stacked layers (15, 17) can be deposited over a wide range of relatively low temperatures including room temperature. Additionally, tellurium can be added to the selenium of either one or both of the first and second multi-stacked layers (15, 17) to reduce the annealing temperature and to form an indium-selenium-tellurium compound bond layer 19 that adhesively bonds the substrates (A, B) to each other. Elemental compounds or amorphous compounds can be used for the materials of the first and second multi-stacked layers (15,17) to form a polycrystalline or amorphous compound bond layer 19 respectively. One advantage of the compound bond layer 19 is that it can be dissolved using a selective wet etching material so that the active substrate A and the base substrate B can be non-destructively detached from each other. <IMAGE></p> |
