发明名称 VERFAHREN ZUR HERSTELLUNG VON HALBLEITERBAUTEILEN MIT HALBLEITERELEMENTEN, DIE IN EINER HALBLEITERSCHICHT GEBILDET WURDEN, WELCHE AUF EINEN TRÄGERWAFER GEKLEBT SIND
摘要 A method of manufacturing a semiconductor device which starts with a semiconductor wafer which is provided with a layer of semiconductor material lying on an insulating layer at a first side. Semiconductor elements and conductor tracks are formed on this first side of the semiconductor wafer. Then the semiconductor wafer is fastened with this first side to a support wafer, and material is removed from the semiconductor wafer from its other, second side until the insulating layer has been exposed. The method starts with a semiconductor wafer whose insulating layer is an insulating as well as a passivating layer. The semiconductor device must be provided with a usual passivating layer after its manufacture in order to protect it against moisture and other influences. In the method described here, such a passivating layer is present already before the manufacture of the semiconductor device starts.
申请公布号 DE69525739(T2) 申请公布日期 2002.10.02
申请号 DE1995625739T 申请日期 1995.11.29
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN 发明人 DEKKER, RONALD;MAAS, GODEFRIDUS;HAHN, STEFFEN
分类号 H01L21/02;H01L21/20;H01L21/336;H01L21/58;H01L21/60;H01L21/68;H01L23/498;H01L27/12;H01L29/786;(IPC1-7):H01L21/20 主分类号 H01L21/02
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