| 发明名称 |
A method of fabricating a Group III nitride film |
| 摘要 |
<p>Plural island-shaped crystal portions are formed on a base. The island-shaped crystal portions are made of a second nitride, and the base is made of a first Al including nitride. Then, a nitride film made of a third nitride is epitaxially grown from the island-shaped crystal portions as nuclei.</p> |
| 申请公布号 |
EP1245701(A2) |
申请公布日期 |
2002.10.02 |
| 申请号 |
EP20020006884 |
申请日期 |
2002.03.26 |
| 申请人 |
NGK INSULATORS, LTD. |
发明人 |
SHIBATA, TOMOHIKO;SUMIYA, SHIGEAKI;ASAI, KEIICHIRO;TANAKA, MITSUHIRO |
| 分类号 |
C30B25/02;C30B25/18;H01L21/20;H01L21/205;(IPC1-7):C30B25/18 |
主分类号 |
C30B25/02 |
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