发明名称 |
Memory with a bit line block and/or a word line block for preventing reverse engineering |
摘要 |
A method and circuit for blocking unauthorized access to at least one memory cell in a semiconductor memory. The method includes providing a switch and/or a link which assumes an open state when access to the at least one memory cell is to be blocked; and coupling a data line associated with the at least one memory cell to a constant voltage source in response to the switch or link assuming an open state.
|
申请公布号 |
US6459629(B1) |
申请公布日期 |
2002.10.01 |
申请号 |
US20010848564 |
申请日期 |
2001.05.03 |
申请人 |
HRL LABORATORIES, LLC |
发明人 |
CLARK, JR. WILLIAM M.;BAUKUS JAMES P.;CHOW LAP-WAI |
分类号 |
G11C17/18;G06F12/14;G11C7/12;G11C7/18;G11C7/24;G11C16/02;G11C16/22;H01L21/8246;H01L21/8247;H01L27/02;H01L27/10;H01L27/112;H01L27/115;(IPC1-7):G11C7/00 |
主分类号 |
G11C17/18 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|