发明名称 |
Dynamic threshold voltage devices with low gate to substrate resistance |
摘要 |
Described is a dynamic threshold field effect transistor (DTFET) that includes a gate-to-body contact structure within the gate. By forming the gate-to-body contact structure that can reduce the gate-to-body contact resistance and increase the device packing density, the DTFET can be used in silicon on insulator (SOI) technologies and take full advantages of the DT-CMOS performance benefit.
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申请公布号 |
US6459106(B2) |
申请公布日期 |
2002.10.01 |
申请号 |
US20010753521 |
申请日期 |
2001.01.03 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BRYANT ANDRES A.;NOWAK EDWARD JOSEPH;TONG MINH HO |
分类号 |
H01L21/84;H01L29/786;(IPC1-7):H01L29/768 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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