| 发明名称 |
Capacitor having tantalum oxynitride film and method for making same |
| 摘要 |
A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film.
|
| 申请公布号 |
US6458645(B2) |
申请公布日期 |
2002.10.01 |
| 申请号 |
US19980031526 |
申请日期 |
1998.02.26 |
| 申请人 |
|
发明人 |
|
| 分类号 |
H01L21/02;H01L21/316;H01L21/8242;(IPC1-7):H01L21/824;H01L21/31;H01L21/469;H01L27/108;H01L29/76 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
