| 摘要 |
A semiconductor substrate is provided with at least a gate formed on the semiconductor substrate. A first ion implantation process is performed to form a pocket implant region within the semiconductor substrate beneath the gate. Following the first ion implantation process, a first rapid thermal annealing (RTA) process is immediately performed to reduce TED effects resulting from the first ion implantation process. Thereafter, a second implantation process is performed to form a source extension doping region and a drain extension doping region within the semiconductor substrate adjacent to the gate. A source doping region and a drain doping region are then formed within the semiconductor substrate adjacent to the gate. Finally, a second RTA process is performed to simultaneously activate dopants in the source extension doping region, the drain extension doping region, the source doping region and the drain doping region.
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