发明名称 Inverse integrated circuit fabrication process
摘要 An inverse IC process provides surface uniformity. A method of fabricating an integrated circuit structure includes a number of interconnect layers and a number of transistors. The method includes providing interconnect layers above a substrate, providing a semiconductor layer above the interconnect layers and providing gate conductors on a top surface of the semiconductor layer. The top surface is opposite a bottom surface. The bottom surface is closer to the interconnect layers than the top surface.
申请公布号 US6458686(B1) 申请公布日期 2002.10.01
申请号 US20010845980 申请日期 2001.04.30
申请人 ADVANCED MICRO DEVICES, INC. 发明人 PIAO FAN
分类号 H01L21/336;H01L21/768;H01L23/48;H01L23/522;(IPC1-7):H01L21/476 主分类号 H01L21/336
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