发明名称 |
Inverse integrated circuit fabrication process |
摘要 |
An inverse IC process provides surface uniformity. A method of fabricating an integrated circuit structure includes a number of interconnect layers and a number of transistors. The method includes providing interconnect layers above a substrate, providing a semiconductor layer above the interconnect layers and providing gate conductors on a top surface of the semiconductor layer. The top surface is opposite a bottom surface. The bottom surface is closer to the interconnect layers than the top surface.
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申请公布号 |
US6458686(B1) |
申请公布日期 |
2002.10.01 |
申请号 |
US20010845980 |
申请日期 |
2001.04.30 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PIAO FAN |
分类号 |
H01L21/336;H01L21/768;H01L23/48;H01L23/522;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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