LOW DIELECTRIC CONSTANT FILM COMPOSED OF BORON, NITROGEN, AND HYDROGEN HAVING THERMAL RESISTANCE, PROCESS FOR FORMING THE FILM, USE OF THE FILM BETWEEN SEMICONDUCTOR DEVICE LAYERS, AND THE DEVICE FORMED FROM THE FILM

摘要

There is provided a film, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances. The low dielectric constant film having thermal resistance comprises molecules comprising boron, nitrogen, and hydrogen, wherein the number of the nitrogen atom is 0.7 to 1.3 and the number of the hydrogen atom is 1.0 to 2.2 based on one boron atom, and of which dielectric constant is at most3 2.4.