发明名称 |
Process for preparing single crystal silicon having uniform thermal history |
摘要 |
A Czochralski method of producing a single crystal silicon ingot having a uniform thermal history. In the process, the power supplied to the side heater is maintained substantially constant throughout the growth of the main body and end-cone of the ingot, while power supplied to a bottom heater is gradually increased during the growth of the second half of the main body and the end-cone. The present process enables an ingot to be obtained which yields wafers having fewer light point defects in excess of about 0.2 microns, while having improved gate oxide integrity.
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申请公布号 |
US6458202(B1) |
申请公布日期 |
2002.10.01 |
申请号 |
US20000596493 |
申请日期 |
2000.06.19 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
KOJIMA MAKOTO;ISHII YASUHIRO |
分类号 |
C30B29/06;C30B15/00;(IPC1-7):C30B15/14 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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