发明名称 |
Controlled method of silicon-rich oxide deposition using HDP-CVD |
摘要 |
A method and system for forming a layer on a substrate in a process chamber are provided. Deposition gases are provided to the process chamber and permitted to mix in the desired relative concentrations prior to the deposition step, resulting in improved composition uniformity of the layer. This may be accomplished by generating a heating plasma from a first gaseous mixture. The plasma is then terminated and a second gaseous mixture is provided to the process chamber such that the second gaseous mixture is substantially uniformly mixed. A second plasma is then generated from the second gaseous mixture to deposit the layer on the substrate.
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申请公布号 |
US6458722(B1) |
申请公布日期 |
2002.10.01 |
申请号 |
US20000697380 |
申请日期 |
2000.10.25 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KAPOOR BIKRAM;ROSSMAN KENT |
分类号 |
C23C16/507;C23C16/02;C23C16/40;H01L21/31;H01L21/316;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
C23C16/507 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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