| 发明名称 |
Method for forming conductive structures |
| 摘要 |
Conductive structures and methods for preparing conductive structures are provided. Conductive structures according to the present invention can be prepared by controllably deforming and shaping a metal layer by using a hydrogen gas source and thermally treating the hydrogen gas source.
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| 申请公布号 |
US6458687(B1) |
申请公布日期 |
2002.10.01 |
| 申请号 |
US20000638227 |
申请日期 |
2000.08.14 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
ELDRIDGE JEROME |
| 分类号 |
H01L21/768;H01L23/522;H01L23/528;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
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