| 摘要 |
A method for controlling a photolithography process includes providing a wafer having a first grating structure and a second grating structure overlying the first grating structure; illuminating at least a portion of the first and second grating structures with a light source; measuring light reflected from the illuminated portion of the first and second grating structures to generate a reflection profile; determining an overlay error between the first and second grating structures based on the reflection profile; and determining at least one parameter of an operating recipe for a photolithography stepper based on the determined overlay error. A processing line includes a photolithography stepper, a first metrology tool, and a controller. The photolithography stepper is adapted to process wafers in accordance with an operating recipe. The first metrology tool is adapted to receive a wafer having a first grating structure and a second grating structure overlying the first grating structure. The metrology tool includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the first and second grating structures. The detector is adapted to measure light reflected from the illuminated portion of the first and second grating structures to generate a reflection profile. The data processing unit is adapted to determine an overlay error between the first and second grating structures based on the reflection profile. The controller is adapted to determine at least one parameter of the operating recipe of the photolithography stepper based on the determined overlay error.
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