| 摘要 |
The present invention relates to a halo ion implantation method for a semiconductor device, and in a semiconductor device formed of a cell array region with a relatively high concentration of pattern and a peripheral circuit region with a relatively low concentration of pattern. The present invention can improve the data maintenance characteristics by not allowing a source/drain junction in the cell array region to be exposed. In a halo ion implantation method for a semiconductor device of the present invention, a semiconductor substrate having at least one flat zone 31 is prepared, a gate oxide film is formed on the semiconductor substrate, and a plurality of gate electrodes are formed on the gate oxide film. Halo ion implantation is implemented in directions in which a wafer(semiconductor substrate) is horizontally rotated by 45, 135, 225 and 315 degrees at the position of the flat zone when each of the gate electrodes 32a is made arranged in a direction horizontal to the flat zone.
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