发明名称 |
Method for fabricating a field-effect transistor having an anti-punch-through implantation region |
摘要 |
A simple method for fabricating a field-effect transistor having an anti-punch-through implantation region is provided. After the anti-punch-through implantation region is formed, a semiconductor substrate is locally oxidized by using a mask layer in order to form a gate insulation layer. The method allows the fabrication of field-effect transistors having improved short-channel properties.
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申请公布号 |
US6458664(B2) |
申请公布日期 |
2002.10.01 |
申请号 |
US20000726960 |
申请日期 |
2000.11.30 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
RICHTER FRANK;TEMMPLER DIETER |
分类号 |
H01L21/28;H01L21/336;H01L29/423;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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