| 摘要 |
The power MOSFET has a semiconductor layer formed on a highly doped semiconductor substrate of a first conductivity type. The semiconductor layer is itself of the other conductivity type and a highly doped source zone of the other conductivity type and a highly doped drain zone of the other conductivity type are formed in the semiconductor layer. The power MOSFET also has a gate electrode. A metallically conductive connection runs between the source zone and the semiconductor substrate, so that the power MOSFET is in the form of a source-down MOSFET, and the heat can be dissipated via the semiconductor substrate or a cooling fin fitted there.
|
