发明名称 |
Method of metal oxide thin film cleaning |
摘要 |
A method of cleaning a metal oxide thin film on a silicon wafer, includes dipping the wafer in an organic solvent; drying the wafer in a nitrogen atmosphere; and stripping any photoresist from the wafer in an oxygen atmosphere under partial vacuum at a temperature of about 200° C. The wafer may also be cleaned by dipping in a polar organic solvent and subjecting the wafer to ultrasound while immersed in the solvent.
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申请公布号 |
US6457479(B1) |
申请公布日期 |
2002.10.01 |
申请号 |
US20010965581 |
申请日期 |
2001.09.26 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
ZHUANG WEI-WEI;ZHANG FENGYAN;HSU SHENG TENG;LI TINGKAI |
分类号 |
H01L21/3065;B08B3/12;H01L21/02;H01L21/302;H01L21/3213;(IPC1-7):B08B6/00 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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