发明名称 |
Transistor formed using a dual metal process for gate and source/drain region |
摘要 |
A method for forming a semiconductor device includes providing a substrate and forming a gate stack on the substrate. The gate stack includes a gate electrode having a thickness. Source/drain regions are formed in the substrate proximate the gate stack, and a first metal silicide layer is formed over the source drain regions. The thickness of the gate electrode is reduced, and a second metal silicide layer is formed over the reduced thickness gate electrode.
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申请公布号 |
US6458678(B1) |
申请公布日期 |
2002.10.01 |
申请号 |
US20000625130 |
申请日期 |
2000.07.25 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SPIKES, JR. THOMAS E.;HAUSE FREDERICK N.;WU DAVID D. |
分类号 |
H01L21/336;H01L21/8238;(IPC1-7):H01L21/320;H01L21/476 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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