| 摘要 |
PROBLEM TO BE SOLVED: To effectively improve the average reflectance of a multilayered light reflecting layer in accordance with an increase in number of pairs without saturating the average reflectance even when the number of pairs is increased by forming the multilayered light reflecting layer of a semiconductor material having a band gap which is larger than that of an active layer. SOLUTION: After a multilayered light reflecting film 12 is formed upon a semiconductor substrate 11, an actively layer 14 is formed on the film 12 with a lower clad layer 13 in between. At the formation of the film 12, a semiconductor material having a band gap which is lager than that of the active layer 14 is used. Then an upper clad layer 15 and a p-type GaP current diffusing layer 16 are successively formed on the active layer 14 and a p-type electrode 17 is formed by vapor-depositing and patterning an Au-Zu film on the layer 16. On the other hand, an n-type electrode 18 composed of another Au-Zn film is formed on the lower surface of the substrate 11 by vapor-depositing the Au-Zn film. |
