| 摘要 |
Disclosed is a novel chemical-sensitization type negative-working photoresist composition capable of exhibiting high sensitivity to actinic rays and giving a patterned resist layer with high resolution and excellently orthogonal cross sectional profile of the patterned resist layer without occurrence of microbridges. The composition comprises (a) a poly(hydroxystyrene)-based resin; (b) a compound capable of releasing an acid by the irradiation with actinic rays such as tris(2,3-dibromopropyl) isocyanurate; and (c) a crosslinking agent such as a urea resin and melamine resin, each in a specified weight proportion, the poly(hydroxystyrene)-based resin as the component (a) having such a dispersion of the molecular weight distribution that the ratio of the weight-average molecular weight Mw to the number-average molecular weight Mn does not exceed 1.4 and being substantially free from low molecular weight fractions including unpolymerized monomer and oligomers having a molecular weight smaller than 1000. |
