METHOD FOR FABRICATING NON-VOLATILE MEMORY DEVICE

摘要

PURPOSE: A method for fabricating a non-volatile memory(NVM) device is provided to increase reliability of a gate interlayer dielectric by reducing the process of exposing the gate interlayer dielectric, and to increase an operation speed by decreasing resistance of a gate electrode formed in a peripheral circuit region. CONSTITUTION: A cell array region and the peripheral circuit region are defined in the NVM device. An isolation layer(301) is formed in a predetermined region of a semiconductor substrate to define the first and second active regions in the cell array region and the peripheral circuit region, respectively. A floating gate pattern covering the first active region and a gate conductive layer covering the peripheral circuit region are formed. The gate interlayer dielectric(306) and a control gate conductive layer(307) are formed on the entire surface of the semiconductor substrate including the floating gate pattern and the gate conductive layer. The control gate conductive layer and the gate interlayer dielectric in the peripheral circuit region are sequentially etched to expose the gate conductive layer in the peripheral circuit region.