METHOD FOR HARDENING PHOTORESIST IN LITHOGRAPHY SYSTEM

摘要

PURPOSE: A method for hardening a photoresist in a lithography system is provided to enhance productivity by performing a process for forming a photo pattern and a hardening process, simultaneously. CONSTITUTION: A photoresist coating process is performed by a resist coating apparatus and a developing apparatus(1). A wafer coated with a resist is baked by a soft bake process(2). A mask pattern or a reticle pattern is formed on the wafer by performing an aligning process and an exposing process(3). A thermal process for the wafer is performed by a post-exposing bake method(4). A developing for the photoresist of the wafer is performed(5). A hard bake process for the wafer is performed(6-1). The hard bake process includes a selective UV(UltraViolet) hardening process. A measuring process and a monitor process for the wafer are performed(7). An etch process for the wafer is performed(9).