METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication method of semiconductor devices is provided to prevent a lapse or a tilt of a capacitor due to increased height of capacitor by using a fixed layer for preventing tilt or lapse. CONSTITUTION: A first interlayer dielectric(12) having a contact plug(14) is formed on a semiconductor substrate(10). After forming an etch stopper(16) on the first interlayer dielectric, a second interlayer dielectric is formed on the etch stopper. A fixed layer made of a silicon nitride for preventing lapse or tilt is formed on the second interlayer dielectric. A fixed layer pattern(22b) and a second interlayer dielectric pattern(18b) are formed so as to form a window by sequentially etching the fixed layer and the second interlayer dielectric. A storage electrode(26a) is formed by filling a polysilicon into the window.