| 摘要 |
PURPOSE: An internal voltage generation circuit of semiconductor memory device and method for generating internal voltage is provided to obtain a stable low VCC margin without reducing a high VCC margin. CONSTITUTION: A circuit for generating an internal voltage of a semiconductor memory device, the internal voltage having a level being lower than that of an external voltage applied from an outside, includes a driver(21) for driving the internal voltage by using the external voltage as a source in response to a driving signal, a selector(22) for selecting and outputting the internal voltage during a deactivation of the control signal and for selecting and outputting a predetermined driving voltage during an activation of the control signal, a first comparator(23) for comparing the output signal of the selector with a first reference voltage and for generating the driving signal in response to the compared result and a control circuit(24). The control circuit(24) deactivates the control signal when the external voltage is higher than the second reference voltage, whereas it activates the control signal when the external voltage is lower than the second reference voltage.
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