| 摘要 |
PURPOSE: A semiconductor device including a surge protection circuit part and a method for fabricating the same are provided to prevent an over-impact transferred along a line by boosting a breakdown voltage. CONSTITUTION: A metallic wiring layer(140) for forming a conductive line has a structure of a multi-layer metal line including the first metallic wiring layer(132) and the second metallic wiring layer(134). The first metallic wiring layer(132) is extended from an upper portion of a chip region of a semiconductor substrate(100) to a lower portion of a pad(150). The first metallic wiring layer(132) includes the first connection portion(132a) connected to the chip region through the first contact plug(112), the second connection portion(132b) connected to a surge protection circuit portion of a surge protection circuit portion forming region through the second contact plug(114), and a pad connection portion(132c) extended to the lower portion of the pad(150). The pad connection portion(132c) of the first metal wiring layer(132) is connected with the pad(150) through a via contact plug(126). The pad(150), the via contact plug(126), and the pad connection portion(132) have an overlapped part on a plane layout, respectively.
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