发明名称 MEMORY CONTROLLER INCORPORATING THEREIN CONTROL CIRCUIT FOR CONTROLLING OUTPUT CURRENT DRIVING CAPACITY OF MEMORY DEVICE AND MEMORY SYSTEM EMPLOYING THE SAME
摘要 PURPOSE: A memory controller incorporating therein a control circuit for controlling an output current driving capacity of a memory device and a memory system employing the same are provided to prevent a glitch of Rambus DRAM caused by an insufficient current flow through an output pin of the Rambus DRAM and reducing a chip area of the Rambus DRAM. CONSTITUTION: A memory controller(25) incorporating therein a control circuit for automatically controlling an output current driving capacity of output drivers(23b), wherein each of output pins are connected to a plurality of channels, respectively and each of the output drivers(23b) drives the output pins(23a), includes a control circuit(25b) for generating control signals to control a current driving capacity of the output drivers(23b) of the semiconductor memory devices(23).
申请公布号 KR20020073701(A) 申请公布日期 2002.09.28
申请号 KR20010013453 申请日期 2001.03.15
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG, DAE HUI
分类号 G11C11/4096;(IPC1-7):G11C11/409 主分类号 G11C11/4096
代理机构 代理人
主权项
地址