| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor integrated circuit device having a dual damascene wiring capable of etching a wiring groove while protecting a lower layer wiring and keeping the shape of a via hole good without using an etching stopper in the case of etching the wiring groove. SOLUTION: The method for manufacturing a semiconductor device includes (a) a process for accumulating an etching stopper film and an inter-layer insulation film on a base including a semiconductor substrate and having a conductive area on a surface, (b) a process for forming the via hole to the semiconductor area through the inter-layer insulation film and the etching stopper film, (c) a process for forming the first barrier metal layer on the bottom surface of the via hole, (d) a process or forming a wiring groove overlapping with the via hole on a plane view at the inter-layer insulation film, and (e) a process for embedding the wring groove and the via hole to form a dual damascene wiring including a second barrier metal layer and a main wiring layer.
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