METHOD FOR FORMING FINE PATTERN, UNIT ELECTRONIC ELEMENT AND QUANTUM DOT LASER

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a quantum dot having a diameter of several nm - several tens nm or a quantum thin line having a width of several nm - several tens nm stably with high positional accuracy and high throughput. SOLUTION: A specified region 1 on the surface of a semiconductor substrate 11 is irradiated with an electron beam to form a lattice defect 3. An oxide film 12 is formed to be thick in the specified region 1 by thermal oxidation. The oxide film 12 is removed from a region 2 other than the specified region and left at least partially in the specified region 1. The surface of the oxide film 12 left in the specified region 1 is reformed. While sustaining the reformed surface 13 of the oxide film 12 at an uppermost layer in the specified region 1, the surface of the semiconductor substrate 11 is coated entirely with an oxide film. Finally a conductive substance 14 is grown only on the reformed surface 13 of the oxide film 12 existing above the specified region 1.