SURFACE LIGHT EMITTING SEMICONDUCTOR LASER

摘要

PROBLEM TO BE SOLVED: To provide a surface light emitting semiconductor layer having structure where band structure is not disturbed near a spacer layer even if an etching stop layer not only for wet etching but also for forming the height of mesa with good controllability in the surface light emitting semiconductor laser formed on a semiconductor substrate such as a GaAs substrate. SOLUTION: A layer 6b which is selected and oxidized and which functions as a current narrowing part is disposed in upper DBR 6. A layer including In and P is arranged in a position which is not adjacent to a first spacer layer 3 in lower DBR 2 as an etching stop layer 2a at the time of etching into a mesa shape.