| 摘要 |
PROBLEM TO BE SOLVED: To ensure high current driving power while suppressing a short channel effect of a finely patterned MIS type semiconductor device. SOLUTION: The MIS device comprises source-drain regions 2 and 3 provided in the active region of an Si substrate while being doped heavily with n-type impurities, extensions 6 and 7 extending from the source-drain regions 2 and 3 toward a region beneath a gate electrode 5 while being doped relatively heavily with the n-type impurities, and two threshold level control pockets 12 contiguous to the extensions 6 and 7 and doped with p-type impurities. The upper part of the threshold level control pocket 12 serves as a channel region lightly doped with the p-type impurities. Since the threshold level control pocket 12 does not touch the source-drain regions 2 and 3, junction capacity is reduced and an operating and speed is enhanced.
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