| 摘要 |
PROBLEM TO BE SOLVED: To provide a DRAM and its fabricating method. SOLUTION: A plurality of active regions are defined by forming an isolation film 53 in a specified region of a semiconductor substrate 51 and a pair of cell transistors are formed in each active region. The pair of cell transistors share one common drain region 61d. A bit line pad 71d is formed on the drain region 61d. A storage node pad 71s is formed on the source region 61s of each cell transistor. A protective film pattern 73 covering the bit line pad is formed in parallel with the gate electrode of the cell transistor, i.e., a word line. A storage node 93 is formed on the storage node pad 71s. The storage node 93 touches the underlying storage node pad 71s directly and insulated electrically from the bit line pad 71d by the protective film pattern 73. |
