| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a TFT with use of a polycrystalline silicon film of more uniform crystallographic orientation and a method for manufacturing the TFT with use of polycrystalline silicon mainly oriented in <100>. SOLUTION: The method for forming a thin film transistor(TFT) structure on a substrate comprises a step of providing a substrate, a step of depositing an amorphous silicon film of at least 100 nm on the substrate, a step of annealing the amorphous silicon film to form polycrystalline silicon mainly having crystallographic orientation of <100>, using a transverse crystallizing process, a step of forming a gate structure on the polycrystalline film and a step of doping the polycrystalline silicon mainly having the crystallographic orientation of <100> to form a source region and a drain region.
|
