| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a highly accurate resist pattern in a three-dimensional shape. SOLUTION: When the resist pattern in the three-dimensional shape is formed, the two photomasks (1st and 2nd photoresistors 1 and 2) having transmissivity distributions are used, the shape of the pattern is roughly matched with one photomask, and its light is made incident on the 2nd photomask, converted to a final garget intensity distribution, and exposed to the resit. Consequently, even if the range of transmissivity formed on the photomask is arrow or even if the transmissivity variation quantity of one gradation is small, the optimum light intensity distribution can be obtained for the target shape.</p> |
