| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a manufacturing method by which a thin-film semiconductor device, having superior transistor characteristics, is manufactured using a low-temperature process. SOLUTION: A manufacturing method of a thin-film semiconductor, having a MIS field effect transistor comprising a gate insulating layer and a gate electrode formed on a semiconductor layer, includes a process, in which after a silicon film 104 (105) comprising a channel part silicon film semiconductor layer has been deposited, the silicon film 104 (105) is subjected to a heat treatment at a temperature which is not higher than 600 deg.C and a process, in which a gate insulating film 106 is formed by ECR-PECVD method; or a process, in which after an amorphous silicon film comprising a channel part has been deposited, an oxygen plasma is applied to the amorphous silicon film before a gate insulating layer is formed; and then the amorphous silicon film is subjected to heat treatment at a temperature which is not higher than 600 deg.C.</p> |
