| 摘要 |
PROBLEM TO BE SOLVED: To provide a material of forming an insulation film which can be manufactured at a low cost, industrially easily and with high purity, which is superior in a handling properties and whose reactivity under a CVD condition is high and to provide a method of forming the insulation film by using the material. SOLUTION: The material for forming the insulation film contains tert- butyldimethylsilane. In the method of forming the insulation film, a mixed gas of heated and gasified tert-butyldimethylsilane, a reactive gas containing an oxygen source, such as nitrous oxide or the like and helium gas, is introduced into the growth chamber of a PECVD apparatus, and a silicon oxide insulating film is formed on a silicon wafer as a substrate. The tert-butyldimethylsilane will not ignite spontaneously, is easy to handle because it is a liquid at room temperature, and is easy to be distilled and purified. As a result, the insulation film of high purity can be formed.
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