SEMICONDUCTOR MEMORY AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an arrangement for suppressing the stripping of a lower electrode of a ferroelectric capacitive element in a region above a plug during the deposition of a PZT film or subsequent heat treatment, and a method for manufacturing a semiconductor memory. SOLUTION: A three-layer film of first metal, a metal nitride film and second metal is formed beneath the lower electrode of the ferroelectric capacitive element wherein the metal nitride film is composed of a nitride of the first or second metal.